The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 02, 2025

Filed:

Nov. 29, 2022
Applicant:

Institute of Microelectronics, Chinese Academy of Sciences, Beijing, CN;

Inventors:

Yongliang Li, Beijing, CN;

Xiaohong Cheng, Beijing, CN;

Fei Zhao, Beijing, CN;

Jun Luo, Beijing, CN;

Wenwu Wang, Beijing, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 62/10 (2025.01); H10D 30/01 (2025.01); H10D 30/43 (2025.01); H10D 30/60 (2025.01); H10D 30/62 (2025.01); H10D 30/67 (2025.01);
U.S. Cl.
CPC ...
H10D 62/121 (2025.01); H10D 30/0243 (2025.01); H10D 30/43 (2025.01); H10D 30/611 (2025.01); H10D 30/62 (2025.01); H10D 30/6735 (2025.01);
Abstract

A semiconductor device and a method of manufacturing the same are disclosed. The semiconductor device includes: a substrate and a channel portion. The channel portion includes a first portion including a fin-shaped structure protruding with respect to the substrate and a second portion located above the first portion and spaced apart from the first portion. The second portion includes one or more nanowires or nanosheets spaced apart from each other. Source/drain portions are arranged on two opposite sides of the channel portion in a first direction and in contact with the channel portion. A gate stack extends on the substrate in a second direction intersecting with the first direction, so as to intersect with the channel portion.


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