Semiconductor device and method of forming the same

Abstract

The present disclosure relates to a semiconductor device and a method of forming the same. The semiconductor device includes: a substrate; a transistor on the substrate, which includes an active cylinder, the active cylinder includes a channel region, a source region and a drain distributed on opposite sides of the channel region, a first doped region located between the source region and the channel region, and a second doped region located between the drain region and the channel region, the first doped impurity region, the source region, the second doped impurity region and the drain region, all these regions include doped ions of the first type, and the doped concentration of the first impurity region is lower than that of the source region impurity concentration, the doped concentration of the second doped region is lower than the doped concentration of the drain region. The present disclosure reduces the band-to-band tunneling effect inside the transistor, thereby reducing the GIDL effect.