The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2025
Filed:
Nov. 28, 2022
Nxp Usa, Inc., Austin, TX (US);
Jie Hu, Chandler, AZ (US);
NXP USA, INC., Austin, TX (US);
Abstract
A heterostructure-based high electron mobility transistor includes a channel region in which a two-dimensional electron gas is formed which is protected by insulating material. A control terminal contacts the channel region within an aperture in the insulating material. The control terminal includes a first metal layer that forms a Schottky contact to the channel region within the aperture and a gate electrode which overlies the first metal layer and the channel region and extends above the channel region adjacent to the aperture.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile