The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2025
Filed:
Jun. 08, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Yi-Hsuan Chen, Taoyuan, TW;
Kuo-Ching Huang, Hsinchu, TW;
Kuen-Yi Chen, Taoyuan, TW;
Yi Ching Ong, Taoyuan, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A semiconductor device includes a ferroelectric tunnel junction (FTJ), wherein the ferroelectric tunnel junction includes a first electrode, a ferroelectric layer disposed over the first electrode, and a second electrode disposed over the ferroelectric layer. The first electrode contains nitrogen or oxygen and is characterized by a first percentage of nitrogen or oxygen. The second electrode contains nitrogen or oxygen and is characterized by a second percentage of nitrogen or oxygen. The first percentage is different from the second percentage.