The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2025
Filed:
Aug. 29, 2022
Memory devices having one-time-programmable fuses and/or antifuses formed from thin-film transistors
Micron Technology, Inc., Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
Memory devices, and associated systems and methods, are disclosed herein. A representative memory device comprises a substrate, an insulative layer over the substrate, and a memory array over the insulative layer. The memory device further comprises a fuse array positioned in the insulative layer and configured as a non-volatile memory that can store trimming and/or other factors. The fuse array can comprise a plurality of transistors configured as fuses and each including a source, a drain, and a gate. The transistors in a first subset of the transistors have a first resistance across one of the source, the drain, and the gate that represents a first logic state, and the transistors in a second subset of the transistors can have a second resistance across the one of the source, the drain, and the gate that is greater than the first resistance and that represents a second logic state.