Method for manufacturing semiconductor structure, semiconductor structure, and semiconductor memory

Abstract

A method for manufacturing a semiconductor structure, a semiconductor structure, and a semiconductor memory are provided. The method includes: providing a substrate, the substrate including a plurality of active areas; forming bit line contact mask structures above the plurality of active areas, each bit line contact mask structure at least covering one active area terminal; performing downward etching along the bit line contact mask structures to form a node contact hole in the active area terminal, and filling the node contact hole with a semiconductor material to form a first node contact structure; and forming a plurality of bit line structures above the plurality of active areas, and continuously filling gaps between the plurality of bit line structures with the semiconductor material until a second node contact structure is formed, the first node contact structure and the second node contact structure collectively forming a node contact structure.