The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 02, 2025

Filed:

Jan. 09, 2023
Applicant:

Changxin Memory Technologies, Inc., Hefei, CN;

Inventors:

Qiang Wan, Hefei, CN;

Kangshu Zhan, Hefei, CN;

Jun Xia, Hefei, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H10D 1/68 (2025.01);
U.S. Cl.
CPC ...
H01L 21/31144 (2013.01); H10D 1/68 (2025.01);
Abstract

Embodiments provide a method for fabricating an array structure of a columnar capacitor and a semiconductor structure. In the method, before a mask layer is removed, a photoresist layer is filled to adjust a thickness of the mask layer in a peripheral region and a thickness of the mask layer in an array region to be equal, thereby preventing a top support layer from being worn due to impacts of different thicknesses of the mask layers on a thickness of the top support layer. In addition, in the method, a third sacrificial layer and an auxiliary layer are further formed to perform dual protection on the top support layer, thereby preventing the top support layer from being thinned in subsequent processes, to increase support strength of the top support layer, thereby further preventing the columnar capacitor from tilting due to insufficient support strength of the top support layer.


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