The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2025
Filed:
Jun. 07, 2022
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Inventors:
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3065 (2006.01); B81C 1/00 (2006.01); H01L 21/308 (2006.01); H10D 1/68 (2025.01);
U.S. Cl.
CPC ...
H01L 21/30655 (2013.01); H01L 21/308 (2013.01); H10D 1/716 (2025.01);
Abstract
Some embodiments pertain to a semiconductor device. The semiconductor device includes a semiconductor substrate including a trench extending downward into an upper surface of the semiconductor substrate. The trench includes a bottom surface and a plurality of scallops along sidewalls of the trench. An oxide layer lines the bottom surface and the sidewalls of the trench. The oxide layer has varying thicknesses along the sidewalls of the trench at different depths. The varying thicknesses step down at discrete increments as a depth into the trench increases.