The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 02, 2025

Filed:

Sep. 25, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Ming-Yuan Song, Hsinchu, TW;

Xinyu Bao, Fremont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/16 (2006.01);
U.S. Cl.
CPC ...
G11C 11/1675 (2013.01); G11C 11/1655 (2013.01); G11C 11/1673 (2013.01); G11C 11/1697 (2013.01);
Abstract

A circuit with a logical function of a computing-in-memory (CiM) operation, a memory device and a method thereof are provided. The circuit includes a first switch controlled by a first input data, a second switch controlled by an inverted first input data, a first and a second SOT MRAM cells, and a third switch controlled by a write word line. The first and the second SOT MRAM cells have a first and a second current paths for setting states of the first and the second SOT MRAM cells. In response to the third switch is turned-on, the state of the first SOT MRAM cell is different from the state of the second SOT MRAM cell. One of the state of the first SOT MRAM cell and the state of the second SOT MRAM cell is read according to one of the inverted first input data and the first input data.


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