The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2025
Filed:
Oct. 29, 2021
The Board of Trustees of the Leland Stanford Junior University, Stanford, CA (US);
Thaibao Phan, Redwood City, CA (US);
Evan W. Wang, Stanford, CA (US);
Jonathan A. Fan, Los Altos, CA (US);
The Board of Trustees of the Leland Stanford Junior University, Stanford, CA (US);
Abstract
Certain examples are directed to methods for detection of anomalies in semiconductor thin-film materials, such as strains, defects and the like, that may precipitate defects in semiconductor processing steps and may adversely impact device and system-level functionality, processing, and yields. Certain methods use filtering optics to provide a set of filter-separated light beams respectively associated with different polarization states of polarized light directed towards a semiconductor-related material sample, and providing a set of sample-characterizing response data based on factors such as sets of polarization-state values, different wavelengths associated with the polarization states, and/or light-incidence angles characterizing separation of the different polarization states. Based on these factors, the types and severities of such anomalies may be analyzed and the related defects remedied.