The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 26, 2025

Filed:

Aug. 30, 2022
Applicants:

Commissariat À L'energie Atomique ET Aux Energies Alternatives, Paris, FR;

Universite Grenoble Alpes, Saint Martin d'Heres, FR;

Inventors:

Fabrice Nemouchi, Grenoble, FR;

Frederic Gustavo, Grenoble, FR;

François Lefloch, Grenoble, FR;

Tom Vethaak, Grenoble, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 60/10 (2023.01); H10N 60/01 (2023.01); H10N 60/12 (2023.01); H10N 60/80 (2023.01);
U.S. Cl.
CPC ...
H10N 60/128 (2023.02); H10N 60/0912 (2023.02); H10N 60/12 (2023.02); H10N 60/805 (2023.02);
Abstract

A Josephson transistor, this transistor comprising a source and a drain each comprising an electric charge reservoir in electrical contact with a semiconductor layer. Each reservoir comprises a lower face and a side face both buried inside the semiconductor layer, The lower face of each reservoir extends mainly in an intermediate plane parallel to the plane of a support, this intermediate plane being located between a lower plane and an upper plane that define the semiconductor layer. The side face of each reservoir extends mainly perpendicular to the plane of the support, this side face facing the corresponding side face of the other reservoir and being separated from this corresponding side face of the other reservoir by a channel located under a gate of this transistor.


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