The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 26, 2025

Filed:

Nov. 06, 2023
Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Hui-Lin Wang, Taipei, TW;

Chen-Yi Weng, New Taipei, TW;

Yi-Wei Tseng, New Taipei, TW;

Chin-Yang Hsieh, Tainan, TW;

Jing-Yin Jhang, Tainan, TW;

Yi-Hui Lee, Taipei, TW;

Ying-Cheng Liu, Tainan, TW;

Yi-An Shih, Changhua County, TW;

I-Ming Tseng, Kaohsiung, TW;

Yu-Ping Wang, Hsinchu, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 50/80 (2023.01); G11C 5/06 (2006.01); G11C 11/16 (2006.01); H10D 48/40 (2025.01); H10N 50/01 (2023.01); H10N 50/10 (2023.01); H10B 61/00 (2023.01);
U.S. Cl.
CPC ...
H10N 50/80 (2023.02); G11C 5/06 (2013.01); G11C 11/16 (2013.01); G11C 11/161 (2013.01); H10D 48/40 (2025.01); H10N 50/01 (2023.02); H10N 50/10 (2023.02); G11C 2211/5615 (2013.01); H10B 61/00 (2023.02);
Abstract

A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a first spacer on one side of the of the MTJ, a second spacer on another side of the MTJ, a first metal interconnection on the MTJ, and a liner adjacent to the first spacer, the second spacer, and the first metal interconnection. Preferably, each of a top surface of the MTJ and a bottom surface of the first metal interconnection includes a planar surface and two sidewalls of the first metal interconnection are aligned with two sidewalls of the MTJ.


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