The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 26, 2025

Filed:

Jan. 20, 2022
Applicants:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

National Taiwan University, Taipei, TW;

Inventors:

Jenn-Gwo Hwu, Taipei, TW;

Jian-Yu Lin, Taipei, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 8/01 (2025.01); H10D 1/66 (2025.01); H10D 8/70 (2025.01); H10D 30/01 (2025.01); H10D 30/62 (2025.01); H10D 62/10 (2025.01); H10D 84/83 (2025.01);
U.S. Cl.
CPC ...
H10D 8/053 (2025.01); H10D 1/66 (2025.01); H10D 8/70 (2025.01); H10D 30/024 (2025.01); H10D 30/6211 (2025.01); H10D 62/115 (2025.01); H10D 84/834 (2025.01);
Abstract

An integrated circuit device includes a semiconductor structure, a tunneling layer, a top electrode, a passivation layer, and a conductive feature. The semiconductor structure has a base portion and a protruding portion over a top surface of the base portion. The tunneling layer is over a top surface of the protruding portion of the semiconductor structure. The top electrode is over the tunneling layer. The passivation layer is over a sidewall of the protruding portion of the semiconductor structure. The conductive feature is directly below the protruding portion of the semiconductor structure.


Find Patent Forward Citations

Hwu, Jenn-Gwo. (2025). Integrated circuit device and method for fabricating the same (U.S. Patent No. 12402334). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12402334

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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