The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12402325 B1

Date of Patent:

Aug. 26, 2025

Filed:

Apr. 11, 2022

Mram structure with contact plug protruding out of contact hole and method of fabricating the same

Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Yi-Hui Lee, Taipei, TW;

I-Ming Tseng, Kaohsiung, TW;

Ying-Cheng Liu, Tainan, TW;

Yi-An Shih, Changhua County, TW;

Yu-Ping Wang, Hsinchu, TW;

Assignee:

UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;

Attorney:

Winston Hsu

Primary Examiner:

Eric W Jones

Int. Cl.

CPC ...

H10B 61/00 (2023.01); H10N 50/01 (2023.01); H10N 50/10 (2023.01); H10N 50/80 (2023.01);

U.S. Cl.

CPC ...

H10B 61/10 (2023.02); H10N 50/01 (2023.02); H10N 50/10 (2023.02); H10N 50/80 (2023.02);

Abstract

An MRAM structure includes a dielectric layer. A contact hole is disposed in the dielectric layer. A contact plug fills in the contact hole and protrudes out of the dielectric layer. The contact plug includes a lower portion and an upper portion. The lower portion fills in the contact hole. The upper portion is outside of the contact hole. The upper portion has a top side and a bottom side greater than the top side. The top side and the bottom side are parallel. The bottom side is closer to the contact hole than the top side. An MRAM is disposed on the contact hole and contacts the contact plug.

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