The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 26, 2025
Filed:
Oct. 27, 2022
Changxin Memory Technologies, Inc., Hefei, CN;
Jun Xia, Hefei, CN;
Shijie Bai, Hefei, CN;
CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei, CN;
Abstract
Embodiments provide a method for fabricating a semiconductor device and the semiconductor device. The method includes: providing a semiconductor substrate having a first region and a second region; forming an initial mask layer on an upper surface of the substrate; patterning the initial mask layer, forming a first pattern mask having a first height on the first region, and forming a second pattern mask having a second height on the second region, where a pattern density of the first pattern mask is greater than a pattern density of the second pattern mask, and the first height is greater than the second height; and etching the substrate based on the first pattern mask and the second pattern mask, transferring a pattern of the first pattern mask to the first region, and transferring a pattern of the second pattern mask to the second region.