The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 26, 2025

Filed:

Apr. 19, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Sechul Park, Bucheon-si, KR;

Unbyoung Kang, Hwaseong-si, KR;

Heewon Kim, Asan-si, KR;

Jongho Park, Cheonan-si, KR;

Hyojin Yun, Suwon-si, KR;

Juil Choi, Seongnam-si, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 25/065 (2023.01); H01L 23/498 (2006.01);
U.S. Cl.
CPC ...
H01L 24/32 (2013.01); H01L 24/16 (2013.01); H01L 24/33 (2013.01); H01L 24/73 (2013.01); H01L 25/0652 (2013.01); H01L 25/0657 (2013.01); H01L 23/49816 (2013.01); H01L 23/49822 (2013.01); H01L 23/49833 (2013.01); H01L 24/83 (2013.01); H01L 2224/16148 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/16237 (2013.01); H01L 2224/16238 (2013.01); H01L 2224/26145 (2013.01); H01L 2224/3201 (2013.01); H01L 2224/32059 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/3303 (2013.01); H01L 2224/33055 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/83203 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06517 (2013.01); H01L 2225/06524 (2013.01); H01L 2225/06527 (2013.01); H01L 2225/06541 (2013.01); H01L 2924/1431 (2013.01); H01L 2924/1436 (2013.01);
Abstract

A semiconductor package includes a first semiconductor chip on a base chip, a second semiconductor chip on the first semiconductor chip in a first direction, each of the first and second semiconductor chips including a TSV and being electrically connected to each other via the TSV, dam structures on the base chip and surrounding a periphery of the first semiconductor chip, a first adhesive film between the base chip and the first semiconductor chip, a portion of the first adhesive film filling a space between the first semiconductor chip and the dam structures, a second adhesive film between the first semiconductor chip and the second semiconductor chip, a portion of the second adhesive film overlapping the dam structures in the first direction, and an encapsulant encapsulating a portion of each of the dam structures, the first semiconductor chip, and the second semiconductor chip.


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