The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 26, 2025

Filed:

May. 05, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Yen Lian Lai, Taipei, TW;

Chun Yu Chen, Hsinchu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/58 (2006.01); H01L 23/00 (2006.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01);
U.S. Cl.
CPC ...
H01L 23/585 (2013.01); H01L 23/562 (2013.01); H10D 30/6735 (2025.01); H10D 30/6757 (2025.01); H10D 62/118 (2025.01);
Abstract

A semiconductor structure includes a device region and a seal structure surrounding the device region. The seal structure includes an outer ring surrounding the device region and a buffer region disposed between the outer ring and the device region. The buffer region includes a first portion having a number of first gate structures extending lengthwise along a first direction and a second portion having a number of second gate structures extending lengthwise along the first direction. The second portion of the buffer region is disposed between the first portion of the buffer region and the outer ring. Along a second direction that is substantially perpendicular to the first direction, a width of each of the first gate structures is greater than a width of each of the second gate structures.


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