The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 26, 2025

Filed:

Jun. 24, 2022
Applicants:

Changxin Memory Technologies, Inc., Hefei, CN;

Beijing Superstring Academy of Memory Technology, Beijing, CN;

Inventors:

Xiaoguang Wang, Hefei, CN;

Dinggui Zeng, Hefei, CN;

Huihui Li, Hefei, CN;

Jiefang Deng, Hefei, CN;

Kanyu Cao, Hefei, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/528 (2006.01); H10B 53/00 (2023.01); H10B 61/00 (2023.01); H10B 63/00 (2023.01);
U.S. Cl.
CPC ...
H01L 23/5283 (2013.01); H10B 53/00 (2023.02); H10B 61/22 (2023.02); H10B 63/30 (2023.02);
Abstract

The present disclosure relates to a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes: a substrate, having a first surface; a plurality of memory cells, located on the first surface of the substrate and arranged according to a first preset pattern; and a plurality of memory contact structures, corresponding to the memory cells in a one-to-one manner, where bottom portions of the memory contact structures are in contact with top portions of the memory cells, and top portions of the memory contact structures are arranged according to a second preset pattern. The bottom portion of the memory contact structure is arranged opposite to the top portion of the memory contact structure.


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