The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 26, 2025
Filed:
Aug. 07, 2022
Nanya Technology Corporation, New Taipei, TW;
Yi-Jen Lo, New Taipei, TW;
NANYA TECHNOLOGY CORPORATION, New Taipei, TW;
Abstract
The present disclosure provides a method of manufacturing a semiconductor device. The method includes: forming a first via and a second via on a semiconductor structure, wherein the semiconductor structure includes a first dielectric layer, a first barrier layer, a first metal, a second barrier layer, a second dielectric layer, a substrate, and a second metal; forming a third dielectric layer on the substrate and a bottom and the inner sidewalls of the first via and the second via; punching through the third dielectric layer on the bottom of the first via and the second via; forming a third barrier layer on the substrate and in the first via and the second via; removing oxides formed from the first metal and the second metal; forming a fourth barrier layer; and forming a conductive material in the first via and the second via.