The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 26, 2025

Filed:

Aug. 12, 2021
Applicant:

Texas Instruments Incorporated, Dallas, TX (US);

Inventors:

Ken Pham, San Jose, CA (US);

Vivek Arora, San Jose, CA (US);

Woochan Kim, San Jose, CA (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/495 (2006.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49513 (2013.01); H01L 21/4825 (2013.01); H01L 21/56 (2013.01); H01L 23/3107 (2013.01); H01L 23/49524 (2013.01); H01L 23/49568 (2013.01); H01L 24/48 (2013.01); H01L 24/73 (2013.01); H01L 24/83 (2013.01); H01L 2224/48175 (2013.01); H01L 2224/73265 (2013.01); H01L 2224/83895 (2013.01);
Abstract

This description relates generally to semiconductor devices and processes. A method for forming a packaged semiconductor package can include attaching a front side of a metal layer to a die pad of a leadframe that includes conductive terminals, so a periphery portion of the metal layer extends beyond a periphery pad surface of the die pad, and a portion of a half-etched cavity on the front side of the metal layer is located near the periphery pad surface of the die pad. The method further includes attaching a semiconductor device to the die pad and encapsulating the semiconductor device, the front side of the metal layer, a portion of a back side of the metal layer, and a portion of the conductive terminals to form a packaged semiconductor device.


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