The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 26, 2025
Filed:
May. 25, 2022
Taiwan Semiconductor Manufacturing Company, Hsinchu, TW;
You-Ru Lin, New Taipei, TW;
Sheng Kai Yeh, Taichung, TW;
Jen-Yuan Chang, Hsinchu, TW;
Chi-Yuan Shih, Zhubei, TW;
Chia-Ming Hung, Taipei, TW;
Hsiang-Fu Chen, Zhubei, TW;
Shih-Fen Huang, Jhubei, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A semiconductor device and method of forming such a device includes a MEMS component including one or more MEMS pixels and having a MEMS membrane substrate and a MEMS sidewall. The semiconductor device includes an analog circuit component bonded to the MEMS component, and which includes at least one analog CMOS component within an analog circuit insulative layer, and an analog circuit component substrate. The semiconductor device includes an HPC component bonded to the analog circuit component substrate. The HPC component includes at least one HPC metal component disposed within an HPC insulative layer, at least one bond pad, at least one bond pad via connecting the at least one bond pad and the at least one HPC metal component, and an HPC substrate. Additionally, the semiconductor device includes a DTC component bonded to the HPC substrate, and which includes a DTC die disposed in a DTC substrate.