The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 26, 2025
Filed:
May. 13, 2024
Applicant:
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Inventors:
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/673 (2006.01); G03F 1/62 (2012.01); G03F 1/66 (2012.01); G03F 7/00 (2006.01); H01L 21/033 (2006.01); H01T 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/67359 (2013.01); G03F 1/62 (2013.01); G03F 1/66 (2013.01); G03F 7/70716 (2013.01); G03F 7/70925 (2013.01); H01L 21/0337 (2013.01); H01T 23/00 (2013.01);
Abstract
A method for fabricating a semiconductor structure, including disposing a mask at a first position in a first chamber, generating a first plurality of ions toward the mask by an ionizer, forming a photoresist layer on a substrate, receiving the substrate in the first chamber, and exposing the photoresist layer with actinic radiation through the mask in the first chamber.