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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12400856 B1

PDFFull Text
Date of Patent:
Aug. 26, 2025

Filed:

Dec. 06, 2022

Methods of forming nanostructures including metal oxides using block copolymer materials

Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Nicholas Hendricks, Boise, ID (US);

Adam L. Olson, Boise, ID (US);

William R. Brown, Boise, ID (US);

Ho Seop Eom, Boise, ID (US);

Xue Chen, Boise, ID (US);

Kaveri Jain, Boise, ID (US);

Scott Schuldenfrei, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:

TraskBritt

Primary Examiner:

Vongsavanh Sengdara

Int. Cl.
CPC ...
H01L 21/027 (2006.01); B81C 1/00 (2006.01); C08G 81/00 (2006.01); C08L 53/00 (2006.01); H01L 21/02 (2006.01); H01L 21/033 (2006.01); H01L 21/3105 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0273 (2013.01); B81C 1/00031 (2013.01); C08G 81/00 (2013.01); C08L 53/005 (2013.01); H01L 21/02118 (2013.01); H01L 21/02175 (2013.01); H01L 21/02318 (2013.01); H01L 21/0332 (2013.01); H01L 21/0337 (2013.01); H01L 21/31058 (2013.01); B81C 2201/0149 (2013.01);
Abstract

A self-assembled nanostructure comprises first domains and second domains. The first domains comprise a first block of a block copolymer material and an activatable catalyst. The second domains comprise a second block and substantially without the activatable catalyst. The activatable catalyst is capable of generating catalyst upon application of activation energy, and the generated catalyst is capable of reacting with a metal oxide precursor to provide a metal oxide. A semiconductor structure comprises such self-assembled nanostructure on a substrate.

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