The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 26, 2025
Filed:
Aug. 18, 2021
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Chien-Liang Chen, New Taipei, TW;
Chien-Yu Wang, Hsinchu, TW;
Wei-Da Chen, Hsinchu County, TW;
Yu-Ning Cheng, Hsinchu, TW;
Shih-Tsung Chen, New Taipei, TW;
Yung-Yao Lee, Hsinchu County, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01J 37/32 (2006.01); H01L 21/687 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32449 (2013.01); H01J 37/32568 (2013.01); H01J 37/32834 (2013.01); H01L 21/68792 (2013.01); H01J 2237/334 (2013.01);
Abstract
A cantilever for gas flow direction control configured to support an electrode housing bowl in an associated etch process chamber. The cantilever may have a cross-section that is circular, elliptical, or airfoil shaped. The shape of the cantilever induces the flow of gas and etch products within the chamber around the cantilever, reducing turbulence around the edge of a wafer.