The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 26, 2025

Filed:

Sep. 23, 2020
Applicant:

Hitachi High-tech Corporation, Tokyo, JP;

Inventors:

Toshiaki Kusunoki, Tokyo, JP;

Noriaki Arai, Tokyo, JP;

Tomihiro Hashizume, Tokyo, JP;

Keigo Kasuya, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/073 (2006.01); H01J 9/02 (2006.01); H01J 9/04 (2006.01); H01J 37/075 (2006.01); H01J 37/28 (2006.01);
U.S. Cl.
CPC ...
H01J 37/073 (2013.01); H01J 9/025 (2013.01); H01J 9/04 (2013.01); H01J 37/075 (2013.01); H01J 37/28 (2013.01); H01J 2237/06316 (2013.01); H01J 2237/06341 (2013.01);
Abstract

The current stability of a field emission electron source and a Schottky electron source where a {100} plane of a hexaboride single crystal is used as an electron emission surface is improved. The electron source includes a tip of a hexaboride single crystal with a <100> axis, in which a top facet of a {100} plane that is surrounded by side facets including at least four {n11} planes and at least four {n10} planes where n represents an integer of 1, 2, or 3 is formed at a front end of the tip of the hexaboride single crystal, and a total area of the side facets of the {n11} planes is more than a total area of the side facets of the {n10} planes.


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