The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 26, 2025

Filed:

Nov. 07, 2023
Applicant:

Ememory Technology Inc., Hsin-Chu, TW;

Inventors:

Hsueh-Wei Chen, Hsinchu County, TW;

Wei-Chiang Ong, Hsinchu County, TW;

Assignee:

EMEMORY TECHNOLOGY INC., Hsin-Chu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 16/10 (2006.01); G11C 7/06 (2006.01); G11C 16/12 (2006.01); G11C 16/24 (2006.01); G11C 16/26 (2006.01); G11C 16/28 (2006.01); H10B 41/35 (2023.01); H10D 30/68 (2025.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
G11C 16/26 (2013.01); G11C 7/062 (2013.01); G11C 7/065 (2013.01); G11C 16/10 (2013.01); G11C 16/12 (2013.01); G11C 16/24 (2013.01); G11C 16/28 (2013.01); H10B 41/35 (2023.02); H10D 30/6892 (2025.01); G11C 2013/0042 (2013.01);
Abstract

A memory cell is connected to a source line, a bit line, a word line, an assist gate line and an erase line. When a program action is performed, a weak programming procedure is first performed on the memory cell, and then a strong programming procedure is performed on the memory cell. When the weak programming procedure is performed, an on voltage is provided to the word line, a first program voltage is provided to the source line, a ground voltage is provided to the bit line, a first assist gate voltage is provided to the assist gate line, and a first erase line voltage is provided to the erase line. When the strong programming procedure is performed, a lower program voltage and a higher assist gate voltage are provided to the memory cell.


Find Patent Forward Citations

Loading…