The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 26, 2025

Filed:

Sep. 28, 2021
Applicant:

Yangtze Memory Technologies Co., Ltd., Hubei, CN;

Inventors:

Jie Wan, Hubei, CN;

Wei Tao, Hubei, CN;

Yuan Tao, Hubei, CN;

Ling Du, Hubei, CN;

Boxuan Cheng, Hubei, CN;

Jian Cao, Hubei, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 3/06 (2006.01); G11C 16/04 (2006.01); G11C 16/10 (2006.01); G11C 16/34 (2006.01); G11C 11/56 (2006.01);
U.S. Cl.
CPC ...
G06F 3/065 (2013.01); G06F 3/0619 (2013.01); G06F 3/0679 (2013.01); G11C 16/0483 (2013.01); G11C 16/10 (2013.01); G11C 16/3459 (2013.01); G11C 11/5671 (2013.01);
Abstract

The present disclosure provides a method of data protection for a three-dimensional NAND memory. The method includes programming a memory cell of the 3D NAND memory according to programming data; and backing up a portion of the programming data associated with the memory cell in response to a program loop count (PLC) that is larger than a threshold value, where the PLC tracks a repeated number of the programming of the memory cell. A previous PLC can be set as the threshold value, where the previous PLC was used by a previous programming operation and was collected after the memory cell was programmed successfully to a previous target logic state.


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