The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 26, 2025

Filed:

Apr. 20, 2023
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Jeremy Binfet, Boise, ID (US);

Liang Yu, Boise, ID (US);

Jonathan S. Parry, Boise, ID (US);

Chulbum Kim, San Jose, CA (US);

Daniel J. Hubbard, Boise, ID (US);

Suresh Rajgopal, San Diego, CA (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 3/06 (2006.01);
U.S. Cl.
CPC ...
G06F 3/0625 (2013.01); G06F 3/0658 (2013.01); G06F 3/0679 (2013.01);
Abstract

A memory device includes memory dies, each memory die including a memory array and control logic, operatively coupled with the memory array, to perform peak power management (PPM) operations. The PPM operations include receiving a request to perform an operation, determining whether to initiate a PPM priority override procedure, and in response to determining to initiate the PPM priority override procedure, performing the PPM priority override procedure to execute the operation. Performing the PPM priority override procedure includes reconfiguring each high current breakpoints as a respective low current breakpoint to execute the operation.


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