The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 26, 2025
Filed:
Jun. 24, 2020
Applicant:
Young Chang Chemical Co., Ltd, Gyeongsangbuk-do, KR;
Inventors:
Assignee:
YOUNG CHANG CHEMICAL CO., LTD, Gyeongsangbuk-do, KR;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C11D 1/00 (2006.01); C11D 1/04 (2006.01); C11D 1/12 (2006.01); C11D 1/14 (2006.01); C11D 1/34 (2006.01); C11D 3/24 (2006.01); C11D 3/30 (2006.01); G03F 7/00 (2006.01); G03F 7/20 (2006.01); G03F 7/32 (2006.01);
U.S. Cl.
CPC ...
C11D 1/004 (2013.01); C11D 1/04 (2013.01); C11D 1/12 (2013.01); C11D 1/146 (2013.01); C11D 1/345 (2013.01); C11D 3/245 (2013.01); C11D 3/30 (2013.01); G03F 7/2004 (2013.01); G03F 7/322 (2013.01); G03F 7/70925 (2013.01); C11D 2111/22 (2024.01);
Abstract
Proposed is a process liquid composition for improving a lifting defect level of a photoresist pattern containing a surfactant and for reducing the number of defects of the photoresist pattern, the composition containing a surfactant and having a surface tension of 40 mN/m or less and a contact angle of 60° or smaller in the photoresist pattern having hydrophobicity represented by a contact angle of 70° or greater of water with respect to a photoresist surface in a photoresist pattern process.