The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 19, 2025

Filed:

Apr. 15, 2024
Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventor:

Chia-Ching Hsu, Singapore, SG;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 70/20 (2023.01); H10N 70/00 (2023.01);
U.S. Cl.
CPC ...
H10N 70/8265 (2023.02); H10N 70/021 (2023.02); H10N 70/245 (2023.02); H10N 70/841 (2023.02); H10N 70/8833 (2023.02);
Abstract

A semiconductor memory device includes a substrate, a first dielectric layer on the substrate, a bottom electrode on the first dielectric layer, a second dielectric layer on the first dielectric layer, and a top electrode in the second dielectric layer. The top electrode has a lower portion around the bottom electrode and a tapered upper portion. A third dielectric layer is disposed above the bottom electrode and around the tapered upper portion of the top electrode. A resistive-switching layer is disposed between a sidewall of the bottom electrode and a sidewall of the lower portion of the top electrode and between the third dielectric layer and a sidewall of the tapered upper portion of the top electrode. An air gap is disposed in the third dielectric layer.


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Hsu, Chia-Ching. (2025). Method for forming a semiconductor memory device (U.S. Patent No. 12396377). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12396377

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