The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 19, 2025

Filed:

Jan. 16, 2024
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Yi-Feng Chang, New Taipei, TW;

Po-Lin Peng, Taoyuan, TW;

Jam-Wem Lee, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 84/85 (2025.01); H10D 8/80 (2025.01); H10D 62/10 (2025.01); H10D 62/17 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 89/60 (2025.01);
U.S. Cl.
CPC ...
H10D 84/854 (2025.01); H10D 8/80 (2025.01); H10D 62/115 (2025.01); H10D 62/371 (2025.01); H10D 84/0186 (2025.01); H10D 84/038 (2025.01); H10D 89/713 (2025.01);
Abstract

A semiconductor device includes a first to sixth regions, a first gate, a first metal contact and a second metal contact. The second region is disposed opposite to the first region with respect to the first gate. The first metal contact couples the first region to the second region. The fourth region is disposed opposite to the third region with respect to the first gate. The second metal contact is coupling the third region to the fourth region. The fifth region is disposed between the first gate and the second region, and is disconnected from the first metal contact and the second metal contact. The sixth region is disposed between the first gate and the first region, and is disconnected from the first metal contact and the second metal contact.


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