The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 19, 2025

Filed:

Apr. 23, 2024
Applicant:

Globalfoundries Singapore Pte. Ltd., Singapore, SG;

Inventor:

Jie Zeng, Singapore, SG;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10D 64/00 (2025.01); H10D 8/00 (2025.01); H10D 8/01 (2025.01); H10D 62/10 (2025.01);
U.S. Cl.
CPC ...
H10D 64/112 (2025.01); H10D 8/00 (2025.01); H10D 8/01 (2025.01); H10D 62/115 (2025.01);
Abstract

The present disclosure relates to semiconductor structures and, more particularly, to high-voltage electrostatic discharge devices and methods of manufacture. The structure includes: a semiconductor material comprising an emitter region, a base region, and a collector region; a thermally grown insulator region on the semiconductor material which extends over a junction of the base region and the collector region; a first field plate on the thermally grown insulator region, the first field plate being electrically connected to the emitter region; and a second field plate on the thermally grown insulator region, the second field plate being electrically connected to the collector region.


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