The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 19, 2025
Filed:
Dec. 08, 2021
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Tao Li, Slingerlands, NY (US);
Ardasheir Rahman, Schenectady, NY (US);
Tsung-Sheng Kang, Ballston Lake, NY (US);
Shogo Mochizuki, Mechanicville, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 30/67 (2025.01); H10D 30/01 (2025.01); H10D 62/10 (2025.01);
U.S. Cl.
CPC ...
H10D 30/6735 (2025.01); H10D 30/031 (2025.01); H10D 30/6713 (2025.01); H10D 30/6729 (2025.01); H10D 30/6757 (2025.01); H10D 62/118 (2025.01);
Abstract
A semiconductor channel material structure is provided that has an improved, i.e., increased, effective channel area. The semiconductor channel material structure includes a plurality of semiconductor channel material nanosheets stacked one atop the other. The increased channel area is afforded by providing at least one through-stack semiconductor channel material that extends through at least one of the semiconductor channel material nanosheets.