The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 19, 2025
Filed:
Aug. 19, 2022
Applicant:
Globalfoundries U.s. Inc., Malta, NY (US);
Inventor:
Santosh Sharma, Austin, TX (US);
Assignee:
GlobalFoundries U.S. Inc., Malta, NY (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/47 (2025.01); H10D 62/10 (2025.01); H10D 62/85 (2025.01); H10D 89/60 (2025.01);
U.S. Cl.
CPC ...
H10D 30/475 (2025.01); H10D 62/117 (2025.01); H10D 62/8503 (2025.01); H10D 89/811 (2025.01);
Abstract
Disclosed are protective structures using depletion-mode and enhancement-mode transistors. A structure according to the disclosure may include a depletion-mode transistor having a gate coupled to ground and a first source/drain terminal. An enhancement-mode transistor includes a gate coupled to a second source/drain terminal of the depletion-mode transistor and a first source/drain terminal coupled to the gate of the depletion-mode transistor. The depletion-mode transistor limits a current flow from the first source/drain terminal to the gate of the enhancement-mode transistor.