The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 19, 2025

Filed:

Nov. 14, 2022
Applicants:

Changxin Memory Technologies, Inc., Hefei, CN;

Beijing Superstring Academy of Memory Technology, Beijing, CN;

Inventors:

Mengkang Yu, Hefei, CN;

Xingsong Su, Hefei, CN;

Weiping Bai, Hefei, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 1/68 (2025.01); H10D 1/00 (2025.01);
U.S. Cl.
CPC ...
H10D 1/042 (2025.01); H10D 1/043 (2025.01); H10D 1/716 (2025.01);
Abstract

The present disclosure provides a capacitor and a manufacturing method thereof, and a semiconductor device. The capacitor includes a plurality of bottom electrodes, a top electrode structure, a dielectric layer, and a gap filling layer, where the top electrode structure is formed on one side of each of the plurality of bottom electrodes, one side of the dielectric layer is in contact with the plurality of bottom electrodes and the other side is in contact with the top electrode structure, and the gap filling layer fills remaining gaps between the plurality of bottom electrodes.


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