The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 19, 2025
Filed:
Dec. 22, 2020
Applicant:
Intel Corporation, Santa Clara, CA (US);
Inventors:
Atul Madhavan, Portland, OR (US);
Abhishek Jain, Portland, OR (US);
Jinhong Shin, Portland, OR (US);
Anant H. Jahagirdar, Hillsboro, OR (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 21/768 (2006.01); H01L 23/498 (2006.01); H01L 23/52 (2006.01); H01L 23/538 (2006.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5384 (2013.01); H01L 21/76802 (2013.01); H01L 23/49877 (2013.01); H01L 23/5386 (2013.01);
Abstract
Embodiments of the disclosure are in the field of advanced integrated circuit structure fabrication. In an example, an integrated circuit structure includes a single dielectric layer above a substrate. A plurality of conductive lines is in an upper portion of the single dielectric layer above a lower portion of the single dielectric layer. A carbon dopant region is in the upper portion of the single dielectric layer, the carbon dopant region between adjacent ones of the plurality of conductive lines.