The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 19, 2025
Filed:
Feb. 12, 2022
Applicant:
Changxin Memory Technologies, Inc., Hefei, CN;
Inventor:
Daejoong Won, Hefei, CN;
Assignee:
CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei, CN;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H01L 21/7682 (2013.01); H01L 21/76825 (2013.01); H01L 21/76832 (2013.01); H01L 21/76834 (2013.01); H01L 21/76885 (2013.01); H10B 12/482 (2023.02);
Abstract
A method for forming a semiconductor device includes the following: after sacrificial side walls are formed on the side walls of conductive connection structures, forming an outer side wall material layer on the surfaces of the sacrificial side walls; perforating the outer side wall material layer to form pinholes in the outer side wall material layer which expose the surfaces of the sacrificial side walls; removing the sacrificial side walls through the pinholes to form air gaps; and forming a cover layer for sealing the pinholes.