The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 19, 2025

Filed:

Aug. 03, 2023
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Shingo Takahashi, Miyagi, JP;

Jenhung Huang, Miyagi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32174 (2013.01); H01J 37/32449 (2013.01); H01J 37/32816 (2013.01); H01J 2237/182 (2013.01); H01J 2237/332 (2013.01);
Abstract

A plasma processing apparatus disclosed includes a chamber, a substrate support, a radio-frequency power supply, and a bias power supply. The substrate support includes an electrode and is provided in the chamber. The radio-frequency power supply supplies radio-frequency power for generating plasma from a gas in the chamber. The bias power supply is electrically coupled to the electrode of the substrate support. The radio-frequency power supply is configured to supply the radio-frequency power in an ignition period in which the plasma is ignited in the chamber. The bias power supply is configured to sequentially apply a plurality of bias pulses, each of which has a negative voltage, to the electrode of the substrate support, and stepwisely or gradually increase absolute values of voltage levels of the plurality of bias pulses in the ignition period.


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Takahashi, Shingo. (2025). Plasma processing apparatus and plasma processing method (U.S. Patent No. 12394599). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12394599

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