The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 19, 2025

Filed:

Mar. 26, 2024
Applicant:

Beijing Naura Microelectronics Equipment Co., Ltd., Beijing, CN;

Inventors:

Jing Wei, Beijing, CN;

Yu Zhang, Beijing, CN;

Gang Wei, Beijing, CN;

Guodao Shan, Beijing, CN;

Chenyu Zhong, Beijing, CN;

Yanyan You, Beijing, CN;

Jing Yang, Beijing, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01J 37/321 (2013.01); H01J 37/32183 (2013.01); H01J 37/32577 (2013.01);
Abstract

A power control method of a lower RF power supply of semiconductor processing equipment includes, when a processing chamber starts semiconductor processing, with a predetermined power compensation equation and according to a pre-obtained first RF circuit parameter set of a reference chamber and a second RF circuit parameter set of a present processing chamber performing the semiconductor processing, obtaining a power compensation coefficient of the present processing chamber relative to the reference chamber, according to the power compensation coefficient and a power setting value of the lower RF power supply of the present processing chamber, calculating a power compensation value of the present processing chamber relative to the reference chamber, and controlling the lower RF power supply to output the power compensation value.


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