The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 19, 2025
Filed:
Sep. 28, 2022
International Business Machines Corporation, Armonk, NY (US);
Pouya Hashemi, Purchase, NY (US);
Ruilong Xie, Niskayuna, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Embodiments are disclosed for a three-terminal spin-orbit-torque (SOT) magnetoresistive random access memory (MRAM) device. The three-terminal SOT MRAM device includes a first type field effect transistor (FET) that drives an SOT line. Additionally, the first type FET includes a write gate in electrical contact with a write wordline (WWL). Further, the device also includes a second type FET in electrical contact with a magnetic tunnel junction (MTJ). Also, the second type FET comprises a read gate in electrical contact with a read wordline (RWL). Additionally, the first type FET is disposed above the second type FET. Further, the three-terminal SOT MRAM device provides a density of three contacted poly pitch (CPP) per two cells.