The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 19, 2025

Filed:

Nov. 12, 2021
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Li-Chun Tien, Hsinchu, TW;

Shun Li Chen, Hsinchu, TW;

Ting-Wei Chiang, Hsinchu, TW;

Ting Yu Chen, Hsinchu, TW;

Xinyong Wang, Hsinchu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/52 (2006.01); G06F 30/30 (2020.01); G06F 30/392 (2020.01); G06F 30/394 (2020.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01);
U.S. Cl.
CPC ...
G06F 30/394 (2020.01); G06F 30/30 (2020.01); G06F 30/392 (2020.01); H01L 23/5226 (2013.01); H01L 23/5286 (2013.01);
Abstract

A method of generating a layout diagram of a semiconductor device includes populating a conductive layer M(h) with segment patterns representing corresponding conductive segments in the semiconductor device. The segment patterns including first and second power grid (PG) patterns and first routing patterns, where h is an integer and h≥1. Arranging long axes of the first and second PG patterns and the first routing patterns to extend in a first direction. Arranging the first and second PG patterns to be separated, relative to a second direction, by a PG gap having a midpoint. The second direction being substantially perpendicular to the first direction. Distributing the first routing patterns between the first and second PG patterns and substantially uniformly in the second direction with respect to the midpoint of the PG gap.


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