The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 2025
Filed:
Jul. 18, 2022
Shanghai Huali Integrated Circuit Corporation, Shanghai, CN;
Xiaojun Zhou, Shanghai, CN;
Shanghai Huali Integrated Circuit Corporation, Shanghai, CN;
Abstract
The present application provides a method for making gates of different sizes compatible with the double patterning technology, comprising: forming a plurality of dummy gate structures and spacers on the sidewalls; covering the spacers and a region of large-sized gates with an SOC(silicon-on-carbon) layer; etching the SOC layer to expose the spacers of at least one dummy gate structure; respectively forming the first and the second SOC pattern structures, wherein the first SOC pattern structure covers the spacer of at least one dummy gate structure, and the second SOC pattern structure is disposed in region of the large-sized gates; etching the first SOC pattern structure to form a third SOC pattern structure, one side of the third SOC pattern structure covers one side of the spacer, wherein the other uncovered side of the spacer is used to define one side of the gate of medium-sized width.