The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 2025
Filed:
Jan. 24, 2022
Applicant:
Changxin Memory Technologies, Inc., Hefei, CN;
Inventor:
Yexiao Yu, Hefei, CN;
Assignee:
CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei, CN;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 64/27 (2025.01); H01L 21/768 (2006.01); H10D 64/01 (2025.01);
U.S. Cl.
CPC ...
H10D 64/513 (2025.01); H01L 21/76895 (2013.01); H10D 64/01 (2025.01);
Abstract
A method for manufacturing a semiconductor structure includes: providing a substrate; forming a gate trench in the substrate, the gate trench including a first trench and a second trench, the second trench being located above the first trench, communicating with the first trench, and having a width greater than a width of the first trench; and forming a gate word line in the gate trench.