The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 2025
Filed:
May. 13, 2022
Infineon Technologies Austria Ag, Villach, AT;
Thomas Feil, Villach, AT;
Infineon Technologies Austria AG, Villach, AT;
Abstract
The disclosure relates to a semiconductor die with a transistor device, having a source region, a drain region, a body region including a channel region, a gate region, which includes a gate electrode, next to the channel region, for controlling a channel formation, a drift region between the channel region and the drain region, and a field electrode region with a field electrode formed in a field electrode trench, which extends into the drift region, wherein the channel region extends laterally and is aligned vertically with the gate region, and wherein at least a portion of the channel region is arranged vertically above the field electrode region.