logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12389654 B1

PDFFull Text
Date of Patent:
Aug. 12, 2025

Filed:

Sep. 21, 2023

Semiconductor device

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventor:

Cheng-Hsien Wu, Hsinchu, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;

Attorney:

Birch, Stewart, Kolasch & Birch, LLP

Primary Examiner:

Dao H Nguyen

Int. Cl.
CPC ...
H10D 64/01 (2025.01); B82Y 10/00 (2011.01); H01L 21/02 (2006.01); H01L 21/027 (2006.01); H01L 21/311 (2006.01); H01L 21/3115 (2006.01); H10D 30/01 (2025.01); H10D 30/43 (2025.01); H10D 30/62 (2025.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01); H10D 62/13 (2025.01); H10D 62/822 (2025.01); H10D 64/27 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 84/83 (2025.01); H10D 84/85 (2025.01); H10D 86/00 (2025.01); H10D 86/01 (2025.01);
U.S. Cl.
CPC ...
H10D 64/017 (2025.01); B82Y 10/00 (2013.01); H01L 21/02164 (2013.01); H01L 21/0226 (2013.01); H01L 21/02321 (2013.01); H01L 21/027 (2013.01); H01L 21/31116 (2013.01); H01L 21/3115 (2013.01); H10D 30/014 (2025.01); H10D 30/024 (2025.01); H10D 30/0243 (2025.01); H10D 30/43 (2025.01); H10D 30/62 (2025.01); H10D 30/6219 (2025.01); H10D 30/6735 (2025.01); H10D 30/6757 (2025.01); H10D 62/121 (2025.01); H10D 62/151 (2025.01); H10D 62/822 (2025.01); H10D 64/01 (2025.01); H10D 64/018 (2025.01); H10D 64/411 (2025.01); H10D 64/517 (2025.01); H10D 84/0158 (2025.01); H10D 84/0193 (2025.01); H10D 84/038 (2025.01); H10D 84/834 (2025.01); H10D 84/853 (2025.01); H10D 86/011 (2025.01); H10D 86/215 (2025.01);
Abstract

A device includes a channel layer, a gate structure, a first gate spacer, and a second gate spacer. The gate structure wraps around the channel layer. The first gate spacer and the second gate spacer are on opposite sides of the gate structure. The first gate spacer has a first portion and a second portion between the gate structure and the first portion of the first gate spacer, and a dopant concentration of the second portion of the first gate spacer is greater than a dopant concentration of the first portion of the first gate spacer.

Find Patent Forward Citations

Quick Actions:

Wu, Cheng-Hsien. (2025). Semiconductor device (U.S. Patent No. 12389654). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12389654

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…