The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 12, 2025

Filed:

Jun. 22, 2022
Applicant:

Yangtze Memory Technologies Co., Ltd., Wuhan, CN;

Inventors:

Liang Chen, Wuhan, CN;

Shiqi Huang, Wuhan, CN;

Wei Liu, Wuhan, CN;

Yanhong Wang, Wuhan, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 43/50 (2023.01); H10B 43/10 (2023.01); H10B 43/27 (2023.01);
U.S. Cl.
CPC ...
H10B 43/50 (2023.02); H10B 43/10 (2023.02); H10B 43/27 (2023.02);
Abstract

A three-dimensional (3D) memory device includes a plurality of memory stacks arranged along a first direction, and a dummy block structure disposed between two adjacent memory stacks. Each memory stack includes a plurality of first conductive layers and a plurality of first dielectric layers alternately stacked along a second direction perpendicular to the first direction. A channel structure extends through the plurality of first conductive layers and the plurality of first dielectric layers along the second direction. A first isolation structure is disposed between the dummy block structure and one of the plurality of memory stacks. A substrate is disposed under the plurality of memory stacks, the dummy block structure, and the first isolation structure. A second isolation structure is disposed in the substrate extending along the second direction.


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