The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 12, 2025

Filed:

Jan. 26, 2021
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Sidhartha Gupta, Boise, ID (US);

Naveen Kaushik, Boise, ID (US);

Pankaj Sharma, Boise, ID (US);

Kyle A. Ritter, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10B 43/27 (2023.01); H10B 41/10 (2023.01); H10B 41/27 (2023.01); H10B 43/10 (2023.01);
U.S. Cl.
CPC ...
H10B 43/27 (2023.02); H10B 41/10 (2023.02); H10B 41/27 (2023.02); H10B 43/10 (2023.02);
Abstract

Some embodiments include an integrated assembly having a channel-material-pillar extending vertically through a stack of alternating conductive levels and insulative levels. The channel-material-pillar includes a first semiconductor material. A second semiconductor material is directly against an upper region of the channel-material-pillar. The second semiconductor material has a higher dopant concentration than the first semiconductor material and joins to the first semiconductor along an abrupt interfacial region such that there is little to no mixing of dopant from the second semiconductor material into the first semiconductor material. Some embodiments include methods of forming integrated assemblies.


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