The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 12, 2025

Filed:

Apr. 01, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Seokhyun Lee, Hwaseong-si, KR;

Dongkyu Kim, Anyang-si, KR;

Kyounglim Suk, Suwon-si, KR;

Hyeonjeong Hwang, Cheonan-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 23/31 (2006.01); H01L 23/367 (2006.01); H01L 23/538 (2006.01); H01L 25/10 (2006.01);
U.S. Cl.
CPC ...
H01L 24/20 (2013.01); H01L 21/4853 (2013.01); H01L 21/4857 (2013.01); H01L 21/563 (2013.01); H01L 21/565 (2013.01); H01L 23/3128 (2013.01); H01L 23/3135 (2013.01); H01L 23/3675 (2013.01); H01L 23/5383 (2013.01); H01L 23/5386 (2013.01); H01L 23/5389 (2013.01); H01L 24/19 (2013.01); H01L 25/105 (2013.01); H01L 2224/214 (2013.01); H01L 2225/1035 (2013.01); H01L 2225/1041 (2013.01);
Abstract

A semiconductor package includes a redistribution substrate including a conductive structure having a lower conductive pattern and a redistribution structure electrically connected to the lower conductive pattern, on the lower conductive pattern, an insulating structure covering at least a side surface of the redistribution structure, and a protective layer between the lower conductive pattern and the insulating structure, a semiconductor chip on the redistribution substrate, and a lower connection pattern below the redistribution substrate and electrically connected to the lower conductive pattern. The protective layer includes a first portion in contact with at least a portion of an upper surface of the lower conductive pattern, and a second portion in contact with at least a portion of a side surface of the lower conductive pattern.


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