The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 2025
Filed:
Mar. 24, 2023
Samsung Electronics Co., Ltd., Suwon-si, KR;
Gyeyoung Kim, Suwon-si, KR;
Woojin Jung, Suwon-si, KR;
Soonmok Ha, Suwon-si, KR;
Junsik Yu, Suwon-si, KR;
Seungkyo Lee, Suwon-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
Provided is a method for forming a photoresist pattern, in which a silicon oxide layer is formed on a substrate. A first photoresist pattern, which contacts the silicon oxide layer, is formed on the silicon oxide layer. Entire-surface exposure is performed on the substrate on which the first photoresist pattern having a defect is formed. The first photoresist pattern is entirely removed by developing the first photoresist pattern, which has been subject to the entire-surface exposure. In addition, a second photoresist pattern is formed on the silicon oxide layer.