The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 2025
Filed:
Dec. 16, 2022
Tokyo Electron Limited, Tokyo, JP;
Jianping Zhao, Austin, TX (US);
Toshihiko Iwao, Austin, TX (US);
Peter Lowell George Ventzek, Austin, TX (US);
Tokyo Electron Limited, Tokyo, JP;
Abstract
A method of processing a substrate that includes: in a plasma processing chamber, performing an atomic layer deposition (ALD) process including cycles of deposition while maintaining a temperature of a substrate support between 25° C. and 450° C., one of the cycles including exposing the substrate loaded in a plasma processing chamber to a first precursor to modify a surface of the substrate with the first precursor, after exposing the substrate, purging the plasma processing chamber with an inert gas, exposing the modified surface of the substrate to a first plasma generated from the inert gas, and flowing a second precursor into the plasma processing chamber, after exposing to the first plasma, to form a conformal layer from the modified surface.